10-FY06BIA050SG-M523E18 Datasheet, PDF (7/27 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
0
25
50
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
400
V
15
V
4
Ǒ
4
Ǒ
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0
25
50
With an inductive load at
T_j =
25/125 °C
V_CE =
400
V
V_GE =
15
V
R_gon =
4
Ǒ
H-Bridge
10-FY06BIA050SG-M523E18
preliminary datasheet
IGBT
E_{on High T}
E_o^E_ff ^{oHnigLhoTw T}
E_{off Low T}
75
100
I_C(A)
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
4
3
3
2
2
1
1
0
0
10
20
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
400
V
15
V
50
A
IGBT
E_{on High T}
E_{on Low T}
E_{off Low T}
E_{off High T}
30
40
R_G(Ω)
FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,25
0,20
0,15
0,10
E_{rec Low T}
0,05
75
I_C(A)
100
0,00
0
10
20
With an inductive load at
T_j =
25/125 °C
V_CE =
400
V
V_GE =
15
V
I_C =
50
A
FWD
E_{rec High T}
E_{rec Low T}
30
40
R_G(Ω)
Copyright by Vincotech
7
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