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| 10-FY06BIA050SG-M523E18 Datasheet, PDF (10/27 Pages) Vincotech – Low inductive 12mm flow1 package | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
18000 ddIIor/edc/tdTt T
16000
14000
12000
10000
8000
6000
4000
2000
0
0
25
50
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
400
V
15
V
4
Ç
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
H-Bridge
10-FY06BIA050SG-M523E18
preliminary datasheet
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
25000
20000
15000
10000
5000
75
100
IC(A)
0
0
10
20
At
Tj =
VR =
IF =
VGE =
25/125 °C
400
V
50
A
15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
dIrec/dt T
dI0/dt T
30
Rgon(â¦) 40
FWD
100
100
D = 0,5
D = 0,5
10-1
0,2
0,1
10-1
0,2
0,1
0,05
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0.000
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
tp (s) 110012
10-5
10-4
10-3
10-2
10-1
100
tp (s) 101102
At
D=
RthJH =
tp / T
1,15
K/W
At
D=
RthJH =
tp / T
1,76
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,09
0,33
0,51
0,16
0,05
Tau (s)
2,0E+00
3,2E-01
9,4E-02
1,5E-02
2,3E-03
R (C/W)
0,06
0,17
0,70
0,53
0,19
0,12
Tau (s)
4,8E+00
7,6E-01
1,6E-01
5,1E-02
1,1E-02
1,6E-03
Copyright by Vincotech
10
Revision: 1
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