10-FY06BIA050SG-M523E18 Datasheet, PDF (16/27 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
2
1,6
1,2
0,8
0,4
0
0
At
25
50
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
15
V
4
Ǒ
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
90
80
70
60
50
40
30
20
10
0
0
25
50
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
15
V
4
Ǒ
10-FY06BIA050SG-M523E18
preliminary datasheet
INPUT BOOST
BOOST FWD
Q_{rr High T}
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
1,5
1,2
BOOST FWD
0,9
0,6
Q_{rr Low T}
0,3
0
75
I_C (A)
100
0
10
20
At
Tj =
VR =
IF =
VGS =
25/125 °C
400
V
50
A
15
V
Q_{rr High T}
Q_{rr Low T}
30
R_Gon(Ω)
40
BOOST FWD
I_{RRM High T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
100
BOOST FWD
80
I_{RRM Low T}
60
40
I_{RRM High T}
20
I_{RRM Low T}
75
100
I_C (A)
0
0
8
16
24
32
40
R_{G on}(Ω)
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
400
V
50
A
15
V
Copyright by Vincotech
16
Revision: 1