10-FY12NMA080SH-M427F Datasheet, PDF (7/30 Pages) Vincotech – Mixed voltage NPC topology

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
4
3
2
1
Half Bridge
half bridge IGBT and NP FWD
10-FY12NMA080SH-M427F
10-PY12NMA080SH-M427FY
preliminary datasheet
IGBT
E_{on High T}
E_{off High T}
E_{on Low T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
4
3
2
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
1
0
0
20
40
60
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
±15
V
8
Ω
8
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0,6
0,5
0,4
0,3
0,2
0,1
0
0
20
40
60
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
8
Ω
0
80
I C (A) ¹⁰⁰
0
10
20
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
±15
V
50
A
FWD
E_{rec High T}
E_{rec Low T}
80
I C (A)
100
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,6
0,5
0,4
0,3
0,2
0,1
0
0
10
20
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
50
A
30
R G (Ω)
40
FWD
E_{rec High T}
E_{rec Low T}
30
R G (Ω)
40
copyright by Vincotech
7
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