10-FY12NMA080SH-M427F Datasheet, PDF (2/30 Pages) Vincotech – Mixed voltage NPC topology

Tj=25°C, unless otherwise specified
Parameter
NP Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
NP IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
NP Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Halfbridge Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Maximum Ratings
10-FY12NMA080SH-M427F
10-PY12NMA080SH-M427FY
preliminary datasheet
Symbol
Condition
Value
Unit
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
1200
V
T_h=80°C
T_c=80°C
50
A
67
T_c=100°C
120
A
T_h=80°C
T_c=80°C
61
W
92
175
°C
V_CE
I_C
I_Cpuls
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_j≤150°C
V_GE=15V
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
51
A
71
225
A
76
W
116
±20
V
6
μs
360
V
175
°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_c=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
19
A
25
30
A
29
W
44
185
°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
1200
V
31
A
41
200
A
62
W
94
175
°C
copyright by Vincotech
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Revision: 1