10-FY12NMA080SH-M427F Datasheet, PDF (14/30 Pages) Vincotech – Mixed voltage NPC topology

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
4
3
2
1
10-FY12NMA080SH-M427F
10-PY12NMA080SH-M427FY
preliminary datasheet
NP IGBT
neutral point IGBT and half bridge FWD
NP IGBT
E_{off High T}
E_{off Low T}
E_{on High T}
E_{on Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
4
3
2
NP IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
1
0
0
20
40
60
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
±15
V
8
Ω
8
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
2,5
2,0
1,5
1,0
0,5
0,0
0
20
40
60
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
8
Ω
0
80
100
I C (A)
0
10
20
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
±15
V
50
A
FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
2,5
2,0
1,5
E_{rec Low T}
1,0
0,5
80
100
I C (A)
0,0
0
10
20
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
50
A
30
R _G( Ω ) 40
FWD
E_{rec High T}
E_{rec Low T}
30
R _G ( Ω ) ⁴⁰
copyright by Vincotech
14
Revision: 1