10-FY12NMA080SH-M427F Datasheet, PDF (15/30 Pages) Vincotech – Mixed voltage NPC topology

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
t_doff
t_f
t_don
0,1
0,01
t_r
0,001
0
20
40
60
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
R_gon =
8
Ω
R_goff =
8
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,4
0,3
10-FY12NMA080SH-M427F
10-PY12NMA080SH-M427FY
preliminary datasheet
NP IGBT
neutral point IGBT and half bridge FWD
NP IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
NP IGBT
t_doff
t_f
0,1
t_don
t_r
0,01
80
100
I C (A)
0,001
0
10
20
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
I_C =
50
A
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,8
t_{rr High T}
0,6
30
RG(Ω )
40
FWD
t_{rr High T}
0,2
0,4
0,1
0,2
t_{rr Low T}
0,0
0
0
20
40
60
80
100
I C (A)
0
10
20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
8,0
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
50
A
±15
V
t_{rr Low T}
30
R gon (Ω)
40
copyright by Vincotech
15
Revision: 1