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| 10-FY12NMA080SH-M427F Datasheet, PDF (10/30 Pages) Vincotech – Mixed voltage NPC topology | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
5000
dIrec/dt T
di0/dtT
4000
3000
2000
1000
0
0
20
40
60
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
±15
V
8
â¦
Figure 19
JFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
Half Bridge
10-FY12NMA080SH-M427F
10-PY12NMA080SH-M427FY
preliminary datasheet
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of JFET turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
15000
12000
9000
6000
3000
0
80 I C (A) 100
0
10
20
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
50
A
±15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
dI0/dt T
dIrec/dt T
30
R gon (â¦) 40
FWD
100
10-1
10-1
D = 0,5
D = 0,5
0,2
0,2
0,1
0,1
10-2
0,05
10-2
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0.000
0.000
10-3
10-3
10-5
10-4
10-3
10-2
10-1
100 t p (s)
101
10-5
10-4
10-3
10-2
10-1
100
t p (s) 101
At
D=
RthJH =
tp / T
0,71
K/W
At
D=
RthJH =
tp / T
1,56
K/W
JFET thermal model values
FWD thermal model values
R (C/W)
0,11
0,23
0,22
0,08
0,06
0,02
Tau (s)
2,9E+00
6,9E-01
2,5E-01
6,2E-02
1,7E-02
2,5E-03
R (C/W)
0,07
0,19
0,65
0,39
0,16
0,10
Tau (s)
5,9E+00
1,1E+00
2,3E-01
7,4E-02
1,4E-02
2,1E-03
copyright by Vincotech
10
Revision: 1
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