10-FY12NMA080SH-M427F Datasheet, PDF (21/30 Pages) Vincotech – Mixed voltage NPC topology

10-FY12NMA080SH-M427F
10-PY12NMA080SH-M427FY
preliminary datasheet
Half bridge Inverse Diode
Figure 1
Typical FWD forward current as
a function of forward voltage
I_F= f(V_F)
35
Halfbridge JFET Inverse Diode
30
25
20
15
T_j = T_jmax-25°C
10
T_j = 25°C
5
0
0
1
2
At
t_p =
250
μs
3
V F (V)
4
Figure 2
FWD transient thermal impedance
as a function of pulse width
Z_thJH = f(t_p)
10¹
Halfbridge JFET Inverse Diode
10⁰
10^-1
10^-2
10^-5
10^-4
10^-3
10^-2
At
D=
R_thJH =
t_p / T
2,548
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10^-1
10⁰
t p (s)
10¹1
Figure 3
Power dissipation as a
function of heatsink temperature
P_tot = f(T_h)
60
Halfbridge JFET Inverse Diode
Figure 4
Forward current as a
function of heatsink temperature
I_F = f(T_h)
25
Halfbridge JFET Inverse Diode
50
20
40
15
30
10
20
5
10
0
0
50
100
At
T_j =
150
ºC
0
150
T h ( ^o C) 200
0
50
100
At
T_j =
150
ºC
150
T h ( ^o C)
200
copyright by Vincotech
21
Revision: 1