10-FY064PA050SG10-M582F08 Datasheet, PDF (6/16 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1,00
t_doff
0,10 _tdon
t_f
0,01
t_r
0,00
0
25
50
With an inductive load at
T_j =
126
°C
V_CE =
300
V
V_GE =
±15
V
R_gon =
8
Ω
R_goff =
8
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(I_C)
0,05
T_j = T_jmax -25°C
0,04
0,03
0,02
T_j = 25°C
0,01
0,00
0
25
50
At
T_j =
V_CE =
V_GE =
R_gon =
25/126 °C
300
V
±15
V
8
Ω
10-FY064PA050SG10-M582F08
H-Bridge
H-Bridge IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1,00
0,10
0,01
H-Bridge IGBT
t_doff
t_don
t_r
t_f
75
I C (A)
100
0,00
0
8
16
24
32
40
RG(Ω )
With an inductive load at
T_j =
126
°C
V_CE =
300
V
V_GE =
±15
V
I_C =
50
A
H-Bridge FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,12
0,09
t_rr
0,06
T_j = T_jmax -25°C
t_rr
75
I C (A)
100
0,03
0,00
0
At
T_j =
V_R =
I_F =
V_GE =
T_j = 25°C
8
16
24
25/126 °C
300
V
50
A
±15
V
H-Bridge FWD
t_rr
t_rr
32 _{R g on ( Ω )} 40
copyright by Vincotech
6
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