10-FY064PA050SG10-M582F08 Datasheet, PDF (10/16 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY064PA050SG10-M582F08
H-Bridge
Figure 25
Safe operating area as a function
of collector-emitter voltage
I_C = f(V_CE)
10³
H-Bridge IGBT
Figure 26
Gate voltage vs Gate charge
V_GE = f(Q_GE)
15
H-Bridge IGBT
10²
100uS
1mS
100mS
10mS
10¹
DC
10⁰
10^-1
10⁰
At
D=
T_h =
V_GE =
T_j =
10¹
single pulse
80
ºC
±15
V
T_jmax
ºC
10²
V CE (V)
10³
12
9
6
3
0
0
At
I_C =
20
50
40
A
130V
520V
60
80
100
120
Q g (nC)
Figure 29
Reverse bias safe operating area
I_C = f(V_CE)
160
140
I_{C MAX}
120
100
80
60
40
20
0
0
100
200
300
400
At
T_j =
T_jmax-25 ºC
Switching mode :
3phase SPWM
H-Bridge IGBT
500
600
700
V CE (V)
copyright by Vincotech
10
Revision: 1