10-FY064PA050SG10-M582F08 Datasheet, PDF (5/16 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
2,0
1,5
1,0
0,5
0,0
0
25
50
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/126 °C
300
V
±15
V
8
Ω
8
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
0,2
0,15
T_j = T_jmax -25°C
0,1
0,05
T_j = 25°C
0
0
25
50
With an inductive load at
T_j =
25/126 °C
V_CE =
300
V
V_GE =
±15
V
R_gon =
8
Ω
10-FY064PA050SG10-M582F08
H-Bridge
H-Bridge IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
2,5
2,0
1,5
1,0
0,5
75
100
I C (A)
0,0
0
8
16
24
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/126 °C
300
V
±15
V
50
A
H-Bridge IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
32
RG( Ω )
40
H-Bridge FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,2
E_rec
0,15
0,1
T_j = T_jmax -25°C
0,05
E_rec
T_j = 25°C
0
75
I C (A)
100
0
8
16
24
With an inductive load at
T_j =
25/126 °C
V_CE =
300
V
V_GE =
±15
V
I_C =
50
A
H-Bridge FWD
E_rec
E_rec
32
R G ( Ω ) ⁴⁰
copyright by Vincotech
5
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