10-FY064PA050SG10-M582F08 Datasheet, PDF (4/16 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY064PA050SG10-M582F08
Figure 1
Typical output characteristics
I_C = f(V_CE)
180
150
120
90
60
30
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
µs
25
°C
7 V to 17 V in steps of 1 V
H-Bridge
H-Bridge IGBT
Figure 2
Typical output characteristics
I_C = f(V_CE)
180
150
120
90
60
30
4
V CE (V)
5
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
µs
125
°C
7 V to 17 V in steps of 1 V
H-Bridge IGBT
4
5
V CE (V)
Figure 3
Typical transfer characteristics
I_C = f(V_GE)
50
H-Bridge IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
150
H-Bridge FWD
40
120
30
20
10
0
0
At
t_p =
V_CE =
T_j = T_jmax-25°C
2
4
6
250
µs
10
V
T_j = 25°C
8
10
V GE (V)
90
T_j = T_jmax-25°C
60
30
0
0
At
t_p =
1
2
250
µs
T_j = 25°C
3
4
5
V F (V)
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4
Revision: 1