10-FY064PA050SG10-M582F08 Datasheet, PDF (1/16 Pages) Vincotech – Low inductive 12mm flow1 package

flowPACK 1H
Features
● Low inductive 12mm flow1 package
● H-Bridge topology
● High-speed IGBT + ultrafast FWD
● Temperature sensor
Target Applications
● Solar inverter
● Power Supply
● Inverter based welding
Types
● 10-FY064PA050SG10-M582F08
10-FY064PA050SG10-M582F08
flow 1
600V/50A
Schematic
T_j=25°C, unless otherwise specified
Parameter
H-Bridge IGBT
Collector-emitter break down voltage
DC collector current *
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT *
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
* measured with phase-change material
H-Bridge FWD
Peak Repetitive Reverse Voltage
DC forward current *
Non-repetitive Peak Surge Current
Power dissipation per Diode *
Maximum Junction Temperature
* measured with phase-change material
Maximum Ratings
Symbol
Condition
V_CE
I_DC
I_Cpulse
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=T_jmax
t_p limited by T_jmax
VCE ≤ 650V, Tj ≤ Top max
T_j=T_jmax
T_j≤150°C
V_GE=15V
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
V_RRM
I_F
I_FSM
P_tot
T_jmax
T_j=T_jmax
60Hz Single Half-Sine Wave
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
Value
Unit
650
V
46
A
61
150
A
150
A
95
W
144
±20
V
5
µs
400
V
175
°C
600
V
30
A
39
300
A
50
W
76
150
°C
copyright by Vincotech
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Revision: 1