10-FY064PA050SG10-M582F08 Datasheet, PDF (3/16 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY064PA050SG10-M582F08
Parameter
H-Bridge IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
H-Bridge FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_GE(th) V_CE=V_GE
0,0008
Tj=25°C
Tj=125°C
4,2
5,1
5,8
V
V_CE(sat)
15
50
Tj=25°C
1,38
1,79
2,22
Tj=125°C
1,99
V
I_CES
0
650
Tj=25°C
Tj=125°C
0,0028
uA
I_GES
20
0
Tj=25°C
Tj=125°C
150
nA
R_gint
none
Ω
t_d(on)
t_r
t_{d(off) Rgoff=8 Ω}
±15
300
50
t_f
Rgon=8 Ω
E_on
E_off
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
93
96
19
21
133
148
6
24
0,54
0,79
0,32
0,57
ns
mWs
C_ies
f=1MHz
0
25
C_rss
3000
Tj=25°C
pF
11
Q_Gate
15
520
50
Tj=25°C
120
nC
R_thJH
Phase-Change
Material
1,00
K/W
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
1,17
K/W
V_F
30
I_RRM
t_rr
Q_rr Rgon=8 Ω
±15
300
50
di(rec)max
/dt
Erec
R_thJH
Phase-Change
Material
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,52
2,6
1,84
V
32
49
A
16
50
ns
0,29
1,10
µC
9152
5573
A/µs
0,02
0,13
mWs
1,39
K/W
1,64
K/W
R
∆R/R R100=1486Ω
P
B_(25/50) Tol. ±3%
B_(25/100) Tol. ±3%
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
Ω
-5
+5
%
200
mW
2
mW/K
3950
K
3996
K
B
copyright by Vincotech
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Revision: 1