TGS2355_15 Datasheet, PDF (7/12 Pages) TriQuint Semiconductor – 0.5-6 GHz High Power GaN Switch

Applications Information
Evaluation Board Layout
RF Layer is 0.010” thick Rogers Corp. RO4350B, εr =
3.66. Metal layers are 0.5 oz. copper. The microstrip
line at the connector interface is optimized for the
Southwest Microwave end launch connector 1092-
02A-5.
The pad pattern shown has been developed and
tested for optimized assembly at TriQuint
Semiconductor. The PCB land pattern has been
developed to accommodate lead and package
tolerances. Since surface mount processes vary from
company to company, careful process development
is recommended.
TGS2355
0.5-6 GHz High Power GaN Switch
Datasheet: Rev - 06-20-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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