TGS2355_15 Datasheet, PDF (6/12 Pages) TriQuint Semiconductor – 0.5-6 GHz High Power GaN Switch

Application Circuit
TGS2355
0.5-6 GHz High Power GaN Switch
Notes:
DC blocking capacitors are required on all RF ports.
VC1 can be biased from either bond pad 3 or 6, and the non-biased bond pad can be left open.
VC2 can be biased from either bond pad 2 or 7, and the non-biased bond pad can be left open.
This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one
unused RF switched port with a 50 Ohm load.
Function Table
RF Path
RFC to RF1
RFC to RF2
State
On-State (Insertion Loss)
Off-State (Isolation)
On-State (Insertion Loss)
Off-State (Isolation)
VC1
0V
-40 V
-40 V
0V
VC2
-40 V
0V
0V
-40 V
Datasheet: Rev - 06-20-14
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Disclaimer: Subject to change without notice
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