TGS2355_15 Datasheet, PDF (5/12 Pages) TriQuint Semiconductor – 0.5-6 GHz High Power GaN Switch

TGS2355
0.5-6 GHz High Power GaN Switch
Typical Performance (Tuned EVB)
Test conditions unless otherwise noted: VC1 = 0 V, VC2 = -40 V, Pulsed RF Input PW=20 usec, Duty Cycle=10%, Temp= +25 °C
Compression vs. Pin vs. Freq.
0.10
V_C1 = 0 V, V_C2 = -40 V, Temp. = 25 °C
0.05
0.00
-0.05
-0.10
-0.15
-0.20
0.1 GHz
0.2 GHz
-0.25
0.3 GHz
0.5 GHz
0.4 GHz
1.0 GHz
-0.30
30 32 34 36 38 40 42 44 46 48 50
Input Power (dBm)
Compression vs. Pin vs. Freq.
0.10
V_C1 = 0 V, V_C2 = -40 V, Temp. = 25 °C
0.05
0.00
-0.05
-0.10
-0.15
2.0 GHz
-0.20
3.0 GHz
4.0 GHz
-0.25
5.0 GHz
-0.30
6.0 GHz
30 32 34 36 38 40 42 44 46 48 50
Input Power (dBm)
Compression vs. Pin vs. Temp.
0.10
V_C1 = 0 V, V_C2 = -40 V, Freq. = 3.0 GHz
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
- 40 °C
+25 °C
+85 °C
-0.30
30 32 34 36 38 40 42 44 46 48 50
Input Power (dBm)
0.10
Compression vs. Pin vs. V_C
V_C1 = 0 V, Freq. = 3.0 GHz, Temp. = 25 °C
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
VC2 = -35 V
VC2 = -40 V
VC2 = -45 V
-0.30
30 32 34 36 38 40 42 44 46 48 50
Input Power (dBm)
Datasheet: Rev - 06-20-14
© 2014 TriQuint
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