TGS2355_15 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – 0.5-6 GHz High Power GaN Switch

Applications
• High Power Switching
TGS2355
0.5-6 GHz High Power GaN Switch
Product Features
• Frequency Range: 0.5 - 6 GHz
• Insertion Loss: < 1.3 dB
• Power Handling: 100 W
• Isolation: 40 dB typical
• Control Voltages: 0 V/-40 V from either side of
the MMIC
• Reflective Switch
• Chip Dimensions: 2.14 x 2.50 x 0.1 mm
Functional Block Diagram
General Description
The TGS2355 is a single-pole, double-throw (SPDT)
reflective switch fabricated on TriQuint’s 0.25um GaN
on SiC production process. Operating from 0.5 to 6
GHz, the TGS2355 provides up to 100 W input power
handling with < 1 dB insertion over most of the
operating band and greater than 40 dB isolation.
The TGS2355 is available in a small 2.14 x 2.50 mm
die size and requires very little control current allowing
for easy system integration without impacting system
power budgets.
The TGS2355 is ideally suited for high power switching
applications across both defense and commercial
applications.
Lead-free and RoHS compliant.
Evaluation boards available on request.
Pin Configuration
Pin No.
1
2, 7
3, 6
4
5
Label
RFC
VC1
VC2
RF1
RF2
Ordering Information
Part No.
TGS2355
ECCN
EAR99
Description
0.5-6 GHz High Power
GaN Switch
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com