TGS2355_15 Datasheet, PDF (2/12 Pages) TriQuint Semiconductor – 0.5-6 GHz High Power GaN Switch

Absolute Maximum Ratings
Parameter
Control Voltage (VC)
Control Current (IC)
Power Dissipation
RF Input Power (pulsed, 10% Duty
Cycle, 20us pulse width)
Channel Temperature, TCH
Mounting Temperature (30 sec)
Rating
-50 V
-3.5 / +3.5 mA
36.8 W
51 dBm
275 °C
320 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
TGS2355
0.5-6 GHz High Power GaN Switch
Recommended Operating Conditions
Parameter
Min Typ Max Units
Frequency
0.5
6 GHz
Input Power Handling
(pulsed)
≤ 50
dBm
Control Voltage
-40
V
Channel Temp., Tch
225
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: Temp= +25°C. Z0 = 50 Ω, Vc=-40 V
Parameter
Min
Operational Frequency Range
0.5
P-0.1dB (pulsed)
Control Current (IC)
Insertion Loss (On-State)
Input Return Loss – On-State (Common Port RL)
Output Return Loss – On-State (Switched Port RL)
Isolation (Off-State)
Output Return Loss – Off-State (Isolated Port RL)
Control Voltage
Insertion Loss Temperature Coefficient
Typ
50
1.0
1.0
15
15
40
2.5
-40
0.003
Max
6
-48
Units
GHz
dBm
mA
dB
dB
dB
dB
dB
V
dB/ °C
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 2 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com