TGS2355_15 Datasheet, PDF (3/12 Pages) TriQuint Semiconductor – 0.5-6 GHz High Power GaN Switch

TGS2355
0.5-6 GHz High Power GaN Switch
Specifications
Thermal and Reliability Information
Parameter
Conditions
Value
Units
Thermal Resistance (θJC) ⁽¹⁾
Channel Temperature (TCH)
Median Lifetime (TM)
TBASE = 85 °C, VC1 = 0 V, VC2 = -40 V,
PIN = 100 W (CW), PDISS =29.3 W
4.78
225
1.56E06
ºC/W
°C
Hrs
Notes:
1.MMIC soldered to 20 mil thick Cu-Mo carrier plate using 1.5 mil thick AuSn solder. Thermal resistance is determined from
the channel to the back of the carrier plate (fixed 85 °C temperature).
Median Lifetime
Test Conditions: 40 V; Failure Criteria = 10% reduction in ID MAX
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
FET13
1E+04
25 50 75 100 125 150 175 200 225 250 275
Channel Temperature, T_CH (°C)
Peak Temperature vs. CW Power
1.5-mil AuSn Die Attach; Pkg base = 85 °C
245
225
205
185
Tch,max for 20-mil CuMo Pkg Base
Recommended Limit for Tch, max
165
145
125
105
85
0
15
30
45
60
75
90
105
RF Input Power, Watts
Maximum Channel Temperature
20 mil CuMo, Tbase = 85 °C, Pin = 100W
245
225
205
185
165
145
125
105
85
1.0E-06
1.0E-05
5% Duty Cycle
10% Duty Cycle
20% Duty Cycle
50% Duty Cycle
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
Pulse Width (sec)
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 3 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com