TGS2353_15 Datasheet, PDF (6/10 Pages) TriQuint Semiconductor – DC – 18 GHz High Power SPDT Switch

TGS2353
DC – 18 GHz High Power SPDT Switch
Bond Pad Description
23
4
1
76
5
Bond Pad
1
2, 7
3, 6
4
5
Symbol
RF In
Vc2
Vc1
RF Out1
RF Out2
Description
Input, matched to 50 ohms, DC coupled
Control voltage #2; can be biased from either side (bond pad 2 or bond pad 7), and non-
biased bond pad can be left opened; see Application Circuit on page 5 as an example
Control voltage #1; can be biased from either side (bond pad 3 or bond pad 6), and non-
biased bond pad can be left opened; see Application Circuit on page 5 as an example
Output #1, matched to 50 ohms, DC coupled
Output #2, matched to 50 ohms, DC coupled
Preliminary Data Sheet: Rev A 06/20/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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