TGS2353_15 Datasheet, PDF (2/10 Pages) TriQuint Semiconductor – DC – 18 GHz High Power SPDT Switch

TGS2353
DC – 18 GHz High Power SPDT Switch
Specifications
Absolute Maximum Ratings
Parameter
Control Voltage, Vc
Control Current, Ic
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,T = 25ºC
Channel Temperature, Tch
Mounting Temperature
(30 Seconds)
Storage Temperature
Rating
- 50 V
-1 to 5.8 mA
3.5 W
41 dBm
275 ^oC
320 ^oC
-40 to 150 ^oC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Recommended Operating Conditions
Parameter
Vc1
Vc2
Ic1 / Ic2
Min Typical Max Units
-40 / 0
V
0 / -40
V
-0.3 to 0.1
mA
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vc1 = -40/0 V, Vc2 = 0/-40 V, see Function Table at Application Circuit on page
5.
Parameter
Min
Typical
Max Units
Operational Frequency Range
DC
18
GHz
Control Current (Ic1/ Ic2)
-0.5
0.1
mA
Insertion Loss (On-State)
< 1.5
dB
Input Return Loss – On-State (Common Port RL)
15
dB
Output Return Loss – On-State (Switched Port RL)
15
dB
Isolation (Off-State)
-30
dB
Output Return Loss – Off-Sate (Isolated Port RL)
Input Power ^1/
2.5
dB
40
dBm
Insertion Loss Temperature Coefficient
-0.003
dB/°C
Switching Speed - On
31
ns
Switching Speed - Off
18
ns
1/ The Input Power will be reduced if < 10 MHz.
Preliminary Data Sheet: Rev A 06/20/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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