TGS2353_15 Datasheet, PDF (5/10 Pages) TriQuint Semiconductor – DC – 18 GHz High Power SPDT Switch

TGS2353
DC – 18 GHz High Power SPDT Switch
Application Circuit
Vc2 ^{2, 7}
J1
1
RF In
Vc1 ^{3, 6}
4
J2
RF Out1
5
J3
RF Out2
Vc1 can be biased from either bond pad 3 or 6, and the non-biased bond pad can be left open.
Vc2 can be biased from either bond pad 2 or 7, and the non-biased bond pad can be left open.
This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused
RF Out port with a 50 Ohm load.
Bias-up Procedure
Vc1 set to -40 V (On State for Insertion Loss) or 0 V (OFF State
for Isolation)
Vc2 set to 0 V (On State for Insertion Loss) or -40 V (OFF State
for Isolation)
Apply RF signal to RF Input
Bias-down Procedure
Turn off RF supply
Turn Vc1 to 0V
Turn Vc2 to 0 V
Function Table
RF Path
RF In to RF Out1 (50 Ohm load to RF Out2)
RF In to RF Out2 (50 Ohm load to RF Out1)
State
On-State (Insertion Loss)
Off-State (Isolation)
On-State (Insertion Loss)
Off-State (Isolation)
Vc1
0V
-40 V
-40 V
0V
Vc2
-40 V
0V
0V
-40 V
Preliminary Data Sheet: Rev A 06/20/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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