TGS2353_15 Datasheet, PDF (3/10 Pages) TriQuint Semiconductor – DC – 18 GHz High Power SPDT Switch

TGS2353
DC – 18 GHz High Power SPDT Switch
Specifications (cont.)
Thermal and Reliability Information
Parameter
Thermal Resistance, θ_JC, measured to back of carrier (die
mounted to a 20 mil CuMo carrier using 1.5 mil 80/20
AuSn)
Channel Temperature (Tch), and Median Lifetime (Tm)
Condition
Tbase = 70 °C
Tbase = 70 °C, Vc1 = 0 V, Vc2 = -40
V, Pin = 10 W, Pdiss = 2.9 W
Rating
θ_JC = 8.4 °C/W
Tch = 94.5 °C
Tm = 1.8 E+10 Hours
1.E+15
Median Lifetime (Tm) vs. Channel Temperature (Tch)
1.E+14
1.E+13
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04 ^FET7
25 50
75 100 125 150 175 200 225 250 275
Channel Temperature, Tch (°C)
Preliminary Data Sheet: Rev A 06/20/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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