TGS2354_15 Datasheet, PDF (3/11 Pages) TriQuint Semiconductor – 0.5-6.0 GHz 40 Watt GaN Switch

TGS2354
0.5-6.0 GHz 40 Watt GaN Switch
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) ⁽¹⁾
Channel Temperature (TCH)
Median Lifetime (TM)
TBASE = 85°C, VC1 = 0 V, VC2 = -40 V,
PIN = 40 W, PDISS = 12 W
7.92
180
8.00E07
ºC/W
°C
Hrs
Notes:
1. MMIC soldered to 40 mil thick Cu-Mo carrier plate using 1.5 mil thick AuSn solder. Thermal resistance is determined from
the channel to the back of the carrier plate (fixed 85 °C temp.).
Median Lifetime
Test Conditions: 40 V; Failure Criteria = 10% reduction in ID MAX
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
FET13
1E+04
25 50 75 100 125 150 175 200 225 250 275
Channel Temperature, T_CH (°C)
Datasheet: Rev - 07-23-14
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