TGS2354_15 Datasheet, PDF (2/11 Pages) TriQuint Semiconductor – 0.5-6.0 GHz 40 Watt GaN Switch

TGS2354
0.5-6.0 GHz 40 Watt GaN Switch
Absolute Maximum Ratings
Parameter
Control Voltage (VC)
Control Current (IC)
Power Dissipation (CW)
RF Input Power (CW)
Channel Temperature, TCH
Mounting Temperature (30 sec)
Storage Temperature
Value
-50 V
-1.0 / +1.0 mA
15 W
46.5 dBm
275 °C
320 °C
-55 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
Recommended Operating Conditions
Parameter
Min Typ Max Units
Frequency
0.5
6 GHz
Input Power Handling
(CW)
≤ 46
dBm
Control Voltage
-40
V
Channel Temp., Tch
≤ 225
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: TBASE = 25 °C, CW Input Power
Parameter
Min
Operational Frequency Range
0.5
P-0.1dB (CW)
Control Current (IC)
Insertion Loss (On-State, 0.5-4 GHz)
Insertion Loss (On-State, 4-8 GHz))
Input Return Loss – On-State (Common Port RL)
Output Return Loss – On-State (Switched Port RL)
Isolation (Off-State)
Output Return Loss – Off-State (Isolated Port RL)
Third Order IM Distortion (VC=-40V)
Switching Speed (10%-90/90-10%, Vc=-20V)
Control Voltage
Insertion Loss Temperature Coefficient
Typical
46
0.1
< 0.5
< 0.8
> 15
> 15
> 26
2.3
< -48
< 50
-40
0.003
Max
6.0
-48
Units
GHz
dBm
mA
dB
dB
dB
dB
dB
dB
dBc
ns
V
dB/ °C
Datasheet: Rev - 07-23-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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