AP561-F_15 Datasheet, PDF (2/17 Pages) TriQuint Semiconductor – 0.7-2.9 GHz 8W HBT Power Amplifier

Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
−55 to 150°C
RF Input Power, CW, 50Ω, T=25°C +33 dBm
Supply Voltage (V_CC)
BV_cbo
Power Dissipation
+15 V
+35 V
14 W
Operation of this device outside the parameter ranges
given above may cause permanent damage.
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Recommended Operating Conditions
Parameter
Min Typ Max Units
Supply Voltage (V_CC)
T_CASE
Tj for >10⁶ hours MTTF
12.0
V
−40
+85 °C
158 °C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: V_CC =+12V, V_PD =+5V, Temp= +25°C, using AP561-PCB2600 application circuit
Parameter
Conditions
Min
Typ
Max Units
Operational Frequency Range
700
2900
MHz
Test Frequency
2600
MHz
Output Channel Power
+30
dBm
Gain
13.0
dB
Input Return Loss
14.5
dB
Output Return Loss
6.5
dB
Error Vector Magnitude
See note 1.
1.7
%
Collector Efficiency
16.2
%
RF Switching Speed
See note 2.
50
ns
Output P1dB
+39
dBm
Operating Current, I_CC
510
mA
Quiescent Current, I_CQ
300
mA
Reference Current, I_REF
10
mA
Thermal Resistance, θ_jc
Module (junction to case)
6.0
°C/W
Notes:
1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels signal, 9.5 dB PAR @ 0.01%.
2. Switching speed: 50% TTL to 100/0% RF. Vpd used for device power down (low=RF off).
Datasheet: Rev B 09-17-13
© 2013 TriQuint
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Disclaimer: Subject to change without notice
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