TCR4S12DWBG Datasheet, PDF (9/15 Pages) Toshiba Semiconductor – 200 mA CMOS Low-Dropout Regulator

4) Dropout Voltage vs. Output Current
TCR4S30DWBG
500
CIN = 0.1 μF, COUT = 1 μF,
400
Ta = 85°C
300
25°C
200
-40°C
100
0
0 20 40 60 80 100 120 140 160 180 200
Output current I_OUT (mA)
TCR4S12DWBG~TCR4S36DWBG
5) Quiescent Current vs. Input Voltage
TCR4S15DWBG
240
CIN = 0.1 μF, COUT = 1 μF
200
IOUT = 150 mA
160
120
50 mA
80
0 mA
40
0
0
1
2
3
4
5
6
Input voltage V_IN (V)
TCR4S18DWBG
240
CIN = 0.1 μF, COUT = 1 μF
200
160
120
IOUT = 150 mA
80
50 mA
40
0
0
1
2
0 mA
3
4
5
6
Input voltage V_IN (V)
TCR4S30DWBG
250
CIN = 0.1 μF, COUT = 1 μF
200
150
IOUT = 150 mA
100
50 mA
50
0 mA
0
0
1
2
3
4
5
6
Input voltage V_IN (V)
9
2010-07-30