TCR4S12DWBG Datasheet, PDF (10/15 Pages) Toshiba Semiconductor – 200 mA CMOS Low-Dropout Regulator

6) Quiescent current vs. Ambient temperature
TCR4S15DWBG
200
VIN = 2.5 V, CIN = 0.1 μF,
COUT = 1μF,
TCR4S12DWBG~TCR4S36DWBG
TCR4S18DWBG
200
VIN = 2.8 V, CIN = 0.1 μF,
COUT = 1μF,
IOUT = 150 mA
100
50 mA
0 mA
0
−50
−25
0
25
50
75
100
Ambient temperature Ta (°C)
TCR4S30DWBG
200
VIN = 4 V, CIN = 0.1 μF,
COUT = 1μF,
IOUT = 150 mA
100
50 mA
0 mA
0
−50
−25
0
25
50
75
100
Ambient temperature Ta (°C)
7) Overcurrent Protection Characteristics
TCR4S15DWBG
2.5
Pulse width = 1 ms
2.0
VIN = 4.5 V
1.5
VIN = 2.5 V
1.0
VIN = 6.0 V
0.5
0
0
100
200
300
400
500 600
Output current I_OUT (mA)
10
IOUT = 150 mA
100
50 mA
0 mA
0
−50
−25
0
25
50
75
100
Ambient temperature Ta (°C)
TCR4S18DWBG
2.5
Pulse width = 1 ms
2.0
VIN = 3.8 V
1.5
VIN = 6.0 V
VIN = 2.8 V
1.0
0.5
0
0
100
200
300
400
500 600
Output current I_OUT (mA)
2010-07-30