TCR4S12DWBG Datasheet, PDF (5/15 Pages) Toshiba Semiconductor – 200 mA CMOS Low-Dropout Regulator

TCR4S12DWBG~TCR4S36DWBG
Application Note
1. Recommended Application (top view)
CONTROL ^VIN
0.1 μF
Control Level
HIGH
LOW
Operation
ON
OFF
GND VOUT
1.0 μF
The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a
capacitor to V_OUT and V_IN for stable input/output operation. (ceramic capacitors can be used)
2. Power Dissipation
Power dissipation is measured on the board condition shown below.
[The Board Condition]
Board material: Glass epoxy
Board dimension: 40 mm x 40 mm , both sides of board , t=1.8 mm
Wireability: a surface approximately 50%
the reverse side approximately 50%
Through hole hall: diameter 0.5 mm x 28
P_D - Ta
1000
800
600
400
200
0
-40
0
40
80
120
Ambient Temperature Ta (℃)
5
2010-07-30