TCR4S12DWBG Datasheet, PDF (1/15 Pages) Toshiba Semiconductor – 200 mA CMOS Low-Dropout Regulator

TCR4S12DWBG~TCR4S36DWBG
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR4S12DWBG~TCR4S36DWBG
200 mA CMOS Low-Dropout Regulator
The TCR4S12DWBG to TCR4S36DWBG are CMOS
general-purpose single-output voltage regulators with an on/off
control input, featuring low dropout voltage and low quiescent bias
current. The TCR4S12WBG to TCR4S36WBG can be enabled and
disabled via the CONTROL pin.
These voltage regulators are available in fixed output voltages
between 1.2 V and 3.6 V in 0.05-V steps and capable of driving up
to 200 mA. They feature overcurrent protection and auto-discharge.
The TCR4S12DWBG to TCR4S36DWBG are offered in the
compact WCSP ( 0.79 mm x 0.79 mm x 0.50 mm ) and allow the use
of small ceramic input and output capacitors. Thus, these devices
are ideal for portable applications that require high-density board
assembly such as cellular phones.
S-UFBGA4-0101-0.40A01
WCSP4
Weight: 0.7 mg (typ)
Features
• Low quiescent bias current ( I_B = 50 μA (typ.) at I_OUT = 0 mA )
• Low stand-by current ( I_B(OFF) = 0.1 μA (typ.) at Stand-by mode )
• Low dropout voltage ( V_IN - V_OUT = 90 mV (typ.) at TCR4S25DWBG, I_OUT = 50 mA )
• High ripple rejection ratio ( R.R = 80 dB (typ) at I_OUT = 10 mA, f =1kHz )
• Low output noise voltage (V_NO = 30 μV_rms (typ.) at TCR4S25DWBG, I_OUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz)
• Auto-discharge
• Control pull-down resistor
• Overcurrent protection
• Ceramic capacitors can be used ( C_IN = 0.1 μF, C_OUT =1.0 μF )
• Very small package, WCSP ( 0.79 mm x 0.79 mm x 0.50 mm )
Pin Assignment (top view)
CONTROL VIN
GND
VOUT
1
2010-07-30