TCR4S12DWBG Datasheet, PDF (11/15 Pages) Toshiba Semiconductor – 200 mA CMOS Low-Dropout Regulator

TCR4S30DWBG
5.0
Pulse width = 1 ms
4.0
3.0
2.0
VIN = 6.0 V
1.0
VIN = 4.0 V
0
0
100
200
300
400
500 600
Output current I_OUT (mA)
TCR4S12DWBG~TCR4S36DWBG
8) Ripple rejection Raito vs. Frequency
TCR4S30DWBG
90
80
70
60
50
40
30
20
VIN = 4.0 V ,Vripple = 500 mVp_−p
10
CIN = none, COUT = 1μF
IOUT = 10 mA, Ta = 25°C
0
10
100
1k
10 k
100 k 300 k
Frequency f (Hz)
11
2010-07-30