TCR4S12DWBG Datasheet, PDF (3/15 Pages) Toshiba Semiconductor – 200 mA CMOS Low-Dropout Regulator

TCR4S12DWBG~TCR4S36DWBG
Electrical Characteristics
(Unless otherwise specified,
V_IN = V_OUT + 1 V, I_OUT = 50 mA, C_IN = 0.1 μF, C_OUT = 1.0 μF, T_j = 25°C)(Note 3)
Characteristics
Symbol
Test Condition
Min
Typ. Max
Unit
Output voltage
Line regulation
Load regulation
Quiescent current
Stand-by current
Dropout voltage
Temperature coefficient
Output noise voltage
V_OUT
Please refer to the Output Voltage Accuracy table
Regï½¥line
V_OUT + 0.5 V ≤ V_IN ≤ 6 V,
I_OUT = 1 mA (Note 4)
⎯
1
15
Reg･load 1 mA ≤ I_OUT ≤ 150 mA
⎯
5
30
I_B
I_OUT = 0 mA
⎯
50
75
I_{B (OFF)} V_CT = 0 V
⎯
0.1
1.0
V_IN-V_OUT
Please refer to the Dropout voltage table
T_CVO −40°C ≤ T_opr ≤ 85°C
⎯
100
⎯
V_NO
V_IN = V_OUT + 1 V,
I_OUT = 10 mA,
10 Hz ≤ f ≤ 100 kHz,
Ta = 25°C
TCR4S12DWBG
to TCR4S20DWBG
TCR4S21DWBG
to TCR4S30DWBG
TCR4S31DWBG
to TCR4S36DWBG
⎯
25
⎯
⎯
30
⎯
⎯
35
⎯
TCR4S12DWBG
1.8
⎯
5.5
TCR4S13DWBG
1.85
⎯
5.5
to TCR4S14DWBG
Input voltage
TCR4S15DWBG
to TCR4S19DWBG
V_OUT +
0.35 V
⎯
6.0
V_IN
⎯
TCR4S20DWBG
to TCR4S21DWBG
V_OUT +
0.28 V
⎯
6.0
TCR4S22DWBG
to TCR4S24DWBG
V_OUT +
0.25 V
⎯
6.0
TCR4S25DWBG
to TCR4S36DWBG
V_OUT +
0.20 V
⎯
6.0
Ripple rejection ratio
R.R.
V_IN = V_OUT + 1 V, I_OUT = 10 mA,
f = 1 kHz, V_Ripple = 500 mV_p-p,
Ta = 25°C
⎯
80
⎯
Control voltage (ON)
V_{CT (ON)} (Note 5)
Control voltage (OFF)
V_{CT (OFF)}
⎯
Note 3: Unless otherwise specified, V_IN for 1.2V to 1.4V output product is V_OUT + 0.5 V
Note 4: V_IN for 1.2V to 1.4V output product is V_OUT + 0.5 V ≤ V_IN ≤ 5.5 V
Note 5: V_{CT (ON)} of 1.2V to 1.4V output product is 5.5V (max)
1.1
⎯
6.0
0
⎯
0.4
mV
mV
μA
μA
ppm/°C
μV_rms
V
dB
V
V
3
2010-07-30