THM72V2010AG Datasheet, PDF (8/30 Pages) Toshiba Semiconductor – 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE

THM72V2010AG/ATG-60/70
Standard DRAM
DM16050295
Electrical Characteristics and Recommended AC Operating Conditions (V_CC = 3.3V±5%, Ta = 0 ~ 70°C) (Notes 6,7,8)
SYMBOL
PARAMETER
THMxxxxxx-60
MIN MAX
THMxxxxxx-70
MIN MAX
UNIT
ns
NOTES
t_RC
t_PC
t_RAC
t_CAC
t_AA
t_CPA
t_RAS
t_RASP
t_RSH
t_CSH
t_RHCP
t_CAS
t_RAL
Random Read or Write Cycle Time
Fast Page Mode Cycle Time
Access Time from RAS
Access Time from CAS
Access Time from Column Address
Access Time from CAS Precharge
RAS Pulse Width
RAS Pulse Width (Fast Page Mode)
RAS Hold Time
CAS Hold Time
CAS Precharge to RAS Hold
CAS Pulse Width
Column Address to RAS Lead
115
-
135
-
ns
45
-
50
-
ns
-
65
-
75
ns
-
25
-
30
ns
-
40
-
45
ns
-
45
-
50
ns
65 10,000 75 10,000 ns
65 200,000 75 200,000 ns
25
-
30
-
ns
65
-
75
-
ns
45
-
50
-
ns
20 10,000 25 10,000 ns
40
-
45
-
ns
9, 14, 15
9, 14
9, 15
9
8
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