THM72V2010AG Datasheet, PDF (5/30 Pages) Toshiba Semiconductor – 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE

DM16050295
Standard DRAM
DC Electrical Characteristics (V_CC = 3.3V±5%, Ta = 0 ~ 70°C)
SYMBOL
PARAMETER
|_CC1
|_CC2
|_CC3
|_CC4
|_CC5
|_CC6
|_{I (L)}
|_{O (L)}
V_OH
V_OL
OPERATING CURRENT
Average Power Supply Operating Current
(RAS, CS, Address Cycling: t_RC=t_RC MIN.)
STANDBY CURRENT
Power Supply Standby Current
(RAS=CAS=V_IH)
RAS ONLY REFRESH CURRENT
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS=V_IH: t_RC=t_RC MIN.)
FAST PAGE MODE CURRENT
Average Power Supply Current, Fast Page Mode
(RAS=V_IL, CAS, Address Cycling: t_PC=t_PC MIN.)
STANDBY CURRENT
Power Supply Standby Current
(RAS=CAS=V_CC-0.2V)
CAS BEFORE RAS REFRESH CURRENT
Average Power Supply Current, CAS Before RAS Mode
(RAS, CAS Cycling: t_RC=t_RC MIN.)
INPUT LEAKAGE CURRENT
Input Leakage Current, any input
(0V≤V_IN≤V_CC, All Other Pins Not Under Test=0V)
OUTPUT LEAKAGE CURRENT
(D_OUT is disabled, (0V≤V_OUT≤V_CC)
OUTPUT LEVEL
Output “H” Level Voltage (I_OUT= -2mA)
OUTPUT LEVEL
Output “L” Level Voltage (I_OUT=2mA)
THMxxxxxx-60
THMxxxxxx-70
THMxxxxxx-60
THMxxxxxx-70
THMxxxxxx-60
THMxxxxxx-70
THMxxxxxx-60
THMxxxxxx-70
THM72V2010AG/ATG-60/70
MIN MAX UNIT
- 1180
mA
- 1000
NOTE
3, 4
5
-
19 mA
- 1180
mA
3, 5
- 1000
-
-
685
mA
595
3, 4
5
- 14.5 mA
- 1180
mA
3, 5
- 1000
-10 10
µA
-10 10
µA
2.4
-
V
-
0.4
V
Capacitance (V_CC = 3.3V±5%, f = 1MHz, Ta = 0 ~ 70°C)
SYMBOL
PARAMETER
C_I1 Input Capacitance (B0, A0 ~ A9, A10R)
C_I2 Input Capacitance (WE0, 2)
C_I3 Input Capacitance (RAS0, 2)
C_I4 Input Capacitance (CAS0, 4)
C_I5 Input Capacitance (OE0, 2)
C_I6 Input Capacitance (PDE)
C_DQ I/O Capacitance (DQ0 ~ 71)
MIN MAX UNIT
-
13
-
10
-
33
-
10
P^F
-
10
-
13
-
30
PRELIMINARY
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
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