THM72V2010AG Datasheet, PDF (6/30 Pages) Toshiba Semiconductor – 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE

THM72V2010AG/ATG-60/70
Standard DRAM
DM16050295
Electrical Characteristics and Recommended AC Operating Conditions (V_CC = 3.3V±5%, Ta = 0 ~ 70°C) (Notes 6,7,8)
SYMBOL
PARAMETER
THMxxxxxx-60
MIN MAX
THMxxxxxx-70
MIN MAX
UNIT
NOTES
t_RC
t_RMW
t_PC
t_PRMW
t_RAC
t_CAC
t_AA
t_CPA
t_CLZ
t_OFF
t_T
t_RP
t_RAS
t_RASP
t_RSH
t_RHCP
t_CSH
t_CAS
t_RCD
t_RAD
t_CRP
t_CP
t_ASR
t_RAH
t_ASC
t_CAH
t_RAL
t_RCS
t_RCH
t_RRH
t_WCH
Random Read or Write Cycle Time
Read-Modify-Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read-Modify-Write Cycle Time
Access Time from RAS
Access Time from CAS
Access Time from Column Address
Access Time from CAS Precharge
CAS to Output in Low-Z
Output Buffer Turn-off Delay
Transition Time (Rise and Fall)
RAS Precharge Time
RAS Pulse Width
RAS Pulse Width (Fast Page Mode)
RAS Hold Time
RAS Hold Time from CAS
Precharge (Fast Page Mode)
CAS Hold Time
CAS Pulse Width
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to RAS Precharge Time
CAS Precharge Time
Row Address Set-Up Time
Row Address Hold Time
Column Address Set-Up Time
Column Address Hold Time
Column Address to RAS Lead Time
Read Command Set-Up Time
Read Command Hold Time
Read Command Hold Time referenced to RAS
Write Command Hold Time
110
-
130
-
ns
165
-
190
-
ns
40
-
45
-
ns
95
-
105
-
ns
-
60
-
70
ns
-
20
-
25
ns
-
35
-
40
ns
-
40
-
45
-
0
-
0
-
ns
0
20
0
20
ns
3
50
3
50
ns
40
-
50
-
ns
60 10,000 70 10,000 ns
60 200,000 70 200,000 ns
20
-
25
-
ns
40
-
45
-
ns
60
-
70
-
ns
15 10,000 20 10,000 ns
20
40
20
45
ns
15
25
15
30
ns
10
-
10
-
ns
10
-
10
-
ns
0
-
0
-
ns
10
-
10
-
ns
0
-
0
-
ns
10
-
15
-
ns
35
-
40
-
ns
0
-
0
-
ns
0
-
0
-
ns
10
-
10
-
ns
10
-
15
-
ns
9, 14,
15
9, 14
9, 15
9
9
10
8
14
15
11
11
6
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PRELIMINARY