THM72V2010AG Datasheet, PDF (7/30 Pages) Toshiba Semiconductor – 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE

DM16050295
Standard DRAM
THM72V2010AG/ATG-60/70
Electrical Characteristics and Recommended AC Operating Conditions (Cont)
SYMBOL
PARAMETER
THMxxxxxx-60
MIN MAX
THMxxxxxx-70
MIN MAX
t_WP
t_RWL
t_CWL
t_DS
t_DH
t_REF
t_WCS
t_CWD
t_RWD
t_AWD
t_CPWD
t_CSR
t_CHR
t_RPC
t_CPT
t_ROH
t_OEA
t_OED
t_OLZ
t_OEZ
t_OEH
t_ODS
t_WTS
t_WTH
t_WRP
t_WRH
t_PD
t_PDOFF
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data Set-Up Time
Data Hold Time
Refresh Period
Write Command Set-Up Time
CAS to WE Delay Time
RAS to WE Delay Time
Column Address to WE Delay Time
CAS Precharge to WE Delay Time
CAS Set-Up Time
(CAS before RAS Cycle)
CAS Hold Time
(CAS before RAS Cycle)
RAS to CAS Precharge Time
CAS Precharge Time
(CAS before RAS Counter Test Cycle)
RAS Hold Time Referenced to OE
OE Access Time
OE to Data Delay
OE to Output in Low-Z
Output buffer turn off Delay Time from OE
OE Command Hold Time
Output Disable Set-Up Time
Write Command Set-Up Time (Test Mode In)
Write Command Hold Time (Test Mode In)
WE to RAS Precharge Time (CAS before RAS Cycle)
WE to RAS Hold Time (CAS before RAS Cycle)
PDE to Presence Detect Data in Low-Z
Presence Detect Data turn off Delay Time from PDE
10
-
15
-
20
-
25
-
15
-
20
-
0
-
0
-
15
-
20
-
-
32
-
32
0
-
0
-
50
-
55
-
90
-
100
-
65
-
70
-
70
-
75
-
10
-
10
-
10
-
15
-
5
-
5
-
20
-
30
-
15
-
15
-
-
20
-
25
20
-
20
-
0
-
0
-
0
20
0
20
15
-
15
-
0
-
0
-
15
-
15
-
10
-
10
-
15
-
15
-
10
-
10
-
-
10
-
10
1
-
1
-
UNIT
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
12
12
13
13
13
13
13
10
PRELIMINARY
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
7