SSM6L14FE Datasheet, PDF (7/9 Pages) Toshiba Semiconductor – Power Management Switch Applications

Q2 (P-ch MOSFET)
10000
Common Source
VDS = -3 V
Ta = 25°C
Pulse Test
1000
|Y_fs| – I_D
100
10
-1
-10
-100
-1000
-10000
Drain current I_D (mA)
Capacitance – V_DS
1000
500
300
100
Ciss
50
30 Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
10
-0.1
-1
Coss
Crss
-10
-100
Drain-Source voltage V_DS (V)
Dynamic Input Characteristic
-8
Common Source
ID = -0.72 A
Ta = 25°C
-6
-4
VDD = - 10 V
VDD = - 16 V
-2
0
0
1
2
3
Total Gate Charge Qg (nC)
SSM6L14FE
10000
1000
Common Source
VGS = 0 V
Pulse Test
D
I_DR – V_DS
G
100
10
I_DR
S
Ta =100 °C
25 °C
1
−25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain-source voltage V_DS (V)
10000
1000 ^toff
tf
100
t – I_D
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 50Ω
ton
10
tr
1
-1
-10
-100
-1000
Drain current I_D (mA)
-10000
7
2010-03-25