SSM6L14FE Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Power Management Switch Applications

SSM6L14FE
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L14FE
○ Power Management Switch Applications
○ High-Speed Switching Applications
• N-ch: 1.5-V drive
P-ch: 1.5-V drive
• N-ch, P-ch, 2-in-1
• Low ON-resistance Q1 N-ch:R_DS(ON) = 330 mΩ (max) (@V_GS = 2.5 V)
R_DS(ON) = 240 mΩ (max) (@V_GS = 4.5 V)
Q2 P-ch:R_DS(ON) = 440 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 300 mΩ (max) (@V_GS = -4.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
1.6±0.05
1.2±0.05
1
6
2
5
3
4
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
V_DSS
20
V
V_GSS
±10
V
I_D
0.8
A
I_DP
1.6
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
V_DSS
−20
V
V_GSS
±8
V
I_D
−0.72
A
I_DP
−1.44
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)
1.Source1 4.Source2
2.Gate1 5.Gate2
3.Drain2
ES6
6.Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2N1D
Weight: 3.0 mg (typ.)
Characteristics
Symbol
Rating
Unit
Power dissipation
P_D(Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm² × 6 )
Marking
654
Equivalent Circuit (top view)
65
4
LL5
Q1 Q2
123
12
3
1
2010-03-25