SSM6L14FE Datasheet, PDF (2/9 Pages) Toshiba Semiconductor – Power Management Switch Applications

Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Symbol
Test Conditions
Min
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_GSS
V_th
|Y_fs|
R_{DS (ON)}
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_on
t_off
V_DSF
I_D = 1 mA, V_GS = 0 V
I_D = 1 mA, V_GS = - 10 V
V_DS = 20 V, V_GS = 0 V
V_GS = ±8 V, V_DS = 0 V
V_DS = 3 V, I_D = 1 mA
V_DS = 3 V, I_D = 500 mA (Note 2)
I_D = 500 mA, V_GS = 4.5 V (Note 2)
I_D = 400 mA, V_GS = 2.5 V (Note 2)
I_D = 250 mA, V_GS = 1.8 V (Note 2)
I_D = 150 mA, V_GS = 1.5 V (Note 2)
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
V_DS = 10 V, I_D = 0.8 A
V_GS = 4.5 V
V_DD = 10 V, I_D = 200 mA
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
I_D = -0.8 A, V_GS = 0 V
(Note 2)
20
12
⎯
⎯
0.35
1.05
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
SSM6L14FE
Typ.
⎯
⎯
⎯
⎯
⎯
2.1
185
245
310
370
90
21
15
2.00
1.02
0.98
18
50
-0.84
Max Unit
⎯
V
⎯
1
μA
±1
μA
1.0
V
⎯
S
240
330
mΩ
450
600
⎯
⎯
pF
⎯
⎯
⎯
nC
⎯
⎯
ns
⎯
-1.2
V
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate−source charge
Gate−drain charge
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 2: Pulse test
Symbol
Test Conditions
Min
V _{(BR) DSS} I_D = -1 mA, V_GS = 0 V
-20
V _{(BR) DSX} I_D = -1 mA, V_GS = 8 V
-12
I_DSS
V_DS = -20 V, V_GS = 0 V
⎯
I_GSS
V_GS = ±8 V, V_DS = 0 V
⎯
V_th
V_DS = -3 V, I_D = -1 mA
-0.3
|Y_fs|
V_DS = -3 V, I_D = -400 mA (Note2) 850
I_D = -400 mA, V_GS = -4.5 V (Note2)
⎯
R_{DS (ON)} ^{ID = -200 mA, VGS = -2.5 V (Note2)}
⎯
I_D = -100 mA, V_GS = -1.8 V (Note2)
⎯
I_D = -50 mA, V_GS = -1.5 V (Note2)
⎯
C_iss
⎯
C_oss
V_DS = -10 V, V_GS = 0 V, f = 1 MHz
⎯
C_rss
⎯
Q_g
⎯
Q_gs
V_DS = -10 V, I_DS= -720 mA
⎯
V_GS = -4.5 V
Q_gd
⎯
t_on
V_DD = -10 V, I_D = -100 mA
⎯
t_off
V_GS = 0 to -2.5 V, R_G = 50 Ω
⎯
V_DSF
I_D = 720 mA, V_GS = 0 V
(Note2)
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
0.25
0.34
0.44
0.55
110
28
20
1.76
1.22
0.54
11
38
0.85
Max Unit
⎯
V
⎯
-10 μA
±1 μA
-1.0 V
⎯ mS
0.30
0.44
Ω
0.67
1.04
⎯
⎯ pF
⎯
⎯
⎯ nC
⎯
⎯
ns
⎯
1.2 V
2
2010-03-25