SSM6L14FE Datasheet, PDF (6/9 Pages) Toshiba Semiconductor – Power Management Switch Applications

Q2 (P-ch MOSFET)
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0
I_D – V_DS
-8 V -4.5 V
-2.5 V
Common Source
Ta = 25 °C
Pulse Test
-1.8 V
-1.5 V
VGS=-1.2 V
-0.2
-0.4
-0.6
-0.8
-1.0
Drain-source voltage V_DS (V)
SSM6L14FE
I_D – V_GS
-10
Common Source
VDS = -3 V
-1 Pulse Test
-0.1
-0.01
-0.001
Ta = 100 °C
25 °C
− 25 °C
-0.0001
0
-1.0
-2.0
Gate-source voltage V_GS (V)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
R_{DS (ON)} – V_GS
ID = -100 mA
Common Source
Pulse Test
25 °C
Ta = 100 °C
− 25 °C
-2
-4
-6
-8
Gate-source voltage V_GS (V)
R_{DS (ON)} – I_D
1.4
Common Source
Ta = 25°C
1.2
Pulse Test
1.0
0.8
-1.5 V
0.6
-1.8 V
0.4 -2.5 V
0.2 VGS = -4.5 V
0
0
-500
-1000
Drain current I_D (mA)
-1500
R_{DS (ON)} – Ta
1
Common Source
Pulse Test
-50 mA / -1.5 V
0.8
-100 mA / -1.8 V
0.6 _{-200 mA / -2.5 V}
0.4
0.2
ID = -400 mA / VGS = -4.5 V
0
−50
0
50
100
150
Ambient temperature Ta (°C)
V_th – Ta
-1.0
Common Source
VDS = -3 V
ID = -1 mA
-0.5
0
−50
0
50
100
150
Ambient temperature Ta (°C)
6
2010-03-25