SSM6L14FE Datasheet, PDF (5/9 Pages) Toshiba Semiconductor – Power Management Switch Applications

Q1 (N-ch MOSFET)
V_th – Ta
1.0
Common Source
ID = 1 mA
VDS = 3 V
0.5
0
−50
0
50
100
150
Ambient temperature Ta (°C)
10000
Common Source
VGS = 0 V
Pulse Test
1000
D
I_DR
I_DR – V_DS
G
100
S
Ta = 100°C
25°C
−25°C
10
1
0
−0.5
−1
−1.5
Drain–source voltage V_DS (V)
10000
5000
1000 toff
500 _tf
100
50
ton
10
tr
5
1
1
t – I_D
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25°C
10
100
1000
Drain current I_D (mA)
10000
SSM6L14FE
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
1
⎪Y_fs⎪ – I_D
Common Source
VDS = 3 V
Ta = 25°C
Pulse Test
10
100
1000
10000
Drain current I_D (mA)
Capacitance – V_DS
1000
500
100
Ciss
50
Coss
10
Crss
5 ^{Common Source}
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
0.1
0.5 1
5 10
50 100
Drain–source voltage V_DS (V)
Dynamic Input Characteristic
10
Common Source
ID = 0.8 A
Ta = 25°C
8
6
VDD = 10 V VDD = 16 V
4
2
0
0
1
2
3
4
Total Gate Charge Qg (nC)
5
2010-03-25