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TC55NEM216AFTN55 Datasheet, PDF (3/11 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |||
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TC55NEM216AFTN55,70
OPERATING MODE
MODE
CE
L
Read
L
L
L
Write
L
L
L
Output Deselect
L
L
H
Standby
*
* = don't care
H = logic high
L = logic low
OE
R/W
LB
L
H
L
L
H
H
L
H
L
*
L
L
*
L
H
*
L
L
H
H
L
H
H
H
H
H
L
*
*
*
*
*
H
UB
I/O1~I/O8
L Output
L High-Z
H Output
L Input
L High-Z
H Input
L High-Z
L High-Z
H High-Z
* High-Z
H High-Z
I/O9~I/O16
Output
Output
High-Z
Input
Input
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
POWER
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
IDDO
IDDS
IDDS
MAXIMUM RATINGS
SYMBOL
RATING
VDD
Power Supply Voltage
VIN
Input Voltage
VI/O
Input/Output Voltage
PD
Power Dissipation
Tsolder
Soldering Temperature (10s)
Tstg
Storage Temperature
Topr
Operating Temperature
*: â2.0 V when measured at a pulse width of 20ns
VALUE
â0.3~7.0
â0.3*~7.0
â0.5~VDD + 0.5
0.6
260
â55~150
â40~85
UNIT
V
V
V
W
°C
°C
°C
DC RECOMMENDED OPERATING CONDITIONS (Ta = â40° to 85°C)
SYMBOL
PARAMETER
VDD
Power Supply Voltage
VIH
Input High Voltage
VIL
Input Low Voltage
VDH
Data Retention Supply Voltage
*: â2.0 V when measured at a pulse width of 20ns
MIN
4.5
2.2
â0.3*
2.0
TYP
MAX
UNIT
5.0
5.5
V

VDD + 0.3
V

0.6
V

5.5
V
2002-07-04 3/11
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