LME49830 Datasheet, PDF (8/23 Pages) National Semiconductor (TI) – Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute

LME49830
SNAS396D – JANUARY 2008 – REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Output Voltage
+V_CC = -V_EE = 50V, f = 20Hz
THD+N vs Output Voltage
+V_CC = -V_EE = 100V, f = 20Hz
10
10
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1
1
0.1
BW = 80 kHz
0.01
0.1
BW = 80 kHz
0.01
0.001
BW = 30 kHz
0.0001
100m
1
10 20 50
OUTPUT VOLTAGE (V_RMS)
Figure 11.
THD+N vs Output Voltage
+V_CC = -V_EE = 50V, f = 1kHz
10
1
0.001
BW = 30 kHz
0.0001
100m
1
10
OUTPUT VOLTAGE (V_RMS)
Figure 12.
50 100
THD+N vs Output Voltage
+V_CC = -V_EE = 100V, f = 1kHz
10
1
0.1
BW = 80 kHz
0.01
0.1
BW = 80 kHz
0.01
0.001
BW = 30 kHz
0.0001
100m
1
10 20 50
OUTPUT VOLTAGE (V_RMS)
Figure 13.
THD+N vs Output Voltage
+V_CC = -V_EE = 50V, f = 20kHz
10
1
0.001
BW = 30 kHz
0.0001
100m
1
10
OUTPUT VOLTAGE (V_RMS)
Figure 14.
50 100
THD+N vs Output Voltage
+V_CC = -V_EE = 100V, f = 20kHz
10
1
0.1
BW = 80 kHz
0.01
0.1
BW = 80 kHz
0.01
0.001
BW = 30 kHz
0.0001
100m
1
10 20 50
OUTPUT VOLTAGE (V_RMS)
Figure 15.
0.001
BW = 30 kHz
0.0001
100m
1
10
OUTPUT VOLTAGE (V_RMS)
Figure 16.
50 100
8
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