LME49830 Datasheet, PDF (10/23 Pages) National Semiconductor (TI) – Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute

LME49830
SNAS396D – JANUARY 2008 – REVISED APRIL 2013
www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR vs Frequency
+V_CC = -V_EE = 100V, No Filters, Input Referred
V_RIPPLE = 200mV_RMS on V_EE pin
0
Mute Attenuation vs I_MUTE
+V_CC = -V_EE = 100V
20
-20
0
-40
-20
-60
-40
-80
-60
f_IN = 1 kHz
-100
-80
-120
-100
-140
-160
20
100
1k
10k
FREQUENCY (Hz)
Figure 23.
100k
-120
f_IN = 20 kHz
-140
40 60 80 100 120 140 160
I_MUTE (PA)
Figure 24.
Output Voltage vs Supply Voltage
100
Slew Rate vs Compensation Capacitor
+V_CC = -V_EE = 100V, V_IN = 1.2V_P, No Load
80
80
60
60
THD+N = 10%
40
40
THD+N = 0.05%
20
20
0
0
20
40
60
80 100
SUPPLY VOLTAGE (±V)
Figure 25.
Supply Current vs Supply Voltage
30
25
20
I_EE
15
10
I_CC
5
0
20 30 40 50 60 70 80 90 100
SUPPLY VOLTAGE (rV)
Figure 27.
0
0 10 20 30 40 50 60
COMPENSATION CAPACITANCE (pF)
Figure 26.
Input Offset Voltage vs Supply Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20 40 60 80 100 120
SUPPLY VOLTAGE (±V)
Figure 28.
10
Submit Documentation Feedback
Product Folder Links: LME49830
Copyright © 2008–2013, Texas Instruments Incorporated