LME49830 Datasheet, PDF (2/23 Pages) National Semiconductor (TI) – Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute

LME49830
SNAS396D – JANUARY 2008 – REVISED APRIL 2013
Typical Application
www.ti.com
+5V
RM
27 k:
+VCC
Mute
+VCC
Mute
Control
CS10
0.1 PF
RF
6.8 k:
Osense
NOUT
BiasP
RGN
120:
+VCC
QN
Ci
Ri
220 PF 240:
CIN
RIN
10 PF 240:
RS
6.8 k:
IN- _-
IN+ ₊
RBIAS
CBIAS ^{10 k:}
20 pF
RB1
1.2 k:
CB1
20 pF
QVBE
TIP31C
RE1
0.1:
RQ
12 k:
BiasM
RB2
500:
RL
RE2
8:
0.1:
GND
-VEE
POUT
Comp
-VEE
CS11
0.1 PF
CC
20 pF
RGP
120:
QP
-VEE
Figure 1. Typical Audio Amplifier Application Circuit
CONNECTION DIAGRAM
15
+V_CC
14
N_OUT
13
P_OUT
12
Bias_P
11
Bias_M
10
-V_EE
9
NC
8
Osense
7
NC
6
Comp
5
IN-
4
IN+
3
GND
2
Mute
1
NC
Figure 2. Plastic Package⁽¹⁾ (Top View)
(1) The NDN0015A is a non-isolated package. The package's metal back and any heat sink to which it is mounted are connected to the V_EE
potential when using only thermal compound. If a mica washer is used in addition to thermal compound, θ_CS (case to sink) is increased,
but the heat sink will be electrically isolated from V_EE.
2
Submit Documentation Feedback
Product Folder Links: LME49830
Copyright © 2008–2013, Texas Instruments Incorporated