LME49830 Datasheet, PDF (7/23 Pages) National Semiconductor (TI) – Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute

LME49830
www.ti.com
SNAS396D – JANUARY 2008 – REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS
THD+N vs Frequency
+V_CC = -V_EE = 20V, V_O = 5V
10
THD+N vs Frequency
+V_CC = -V_EE = 20V, V_O = 10V
10
1
1
0.1
0.01
BW = 80 kHz
0.001
0.0001
20
BW = 30 kHz
100
1k
FREQUENCY (Hz)
10k 20k
Figure 5.
THD+N vs Frequency
+V_CC = -V_EE = 50V, V_O = 14V
10
0.1
0.01
BW = 80 kHz
0.001
0.0001
20
BW = 30 kHz
100
1k
FREQUENCY (Hz)
10k 20k
Figure 6.
THD+N vs Frequency
+V_CC = -V_EE = 50V, V_O = 20V
10
1
1
0.1
0.01
BW = 80 kHz
0.001
0.0001
20
BW = 30 kHz
100
1k
FREQUENCY (Hz)
10k 20k
Figure 7.
THD+N vs Frequency
+V_CC = -V_EE = 100V, V_O = 14V
10
0.1
0.01
0.001
0.0001
20
BW = 80 kHz
BW = 30 kHz
100
1k
FREQUENCY (Hz)
10k 20k
Figure 8.
THD+N vs Frequency
+V_CC = -V_EE = 100V, V_O = 30V
10
1
1
0.1
0.01
0.001
0.0001
20
BW = 80 kHz
BW = 30 kHz
100
1k
FREQUENCY (Hz)
10k 20k
Figure 9.
0.1
0.01
0.001
0.0001
20
BW = 80 kHz
BW = 30 kHz
100
1k
FREQUENCY (Hz)
Figure 10.
10k 20k
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