BQ25601 Datasheet, PDF (8/60 Pages) Texas Instruments – I2C Controlled 3-A, Single-Cell Battery Charger for High Input Voltage and Narrow Voltage DC (NVDC) Power Path Management

bq25601
SLUSCK5 – MARCH 2017
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Electrical Characteristics (continued)
V_{VAC_UVLOZ} < V_VAC < V_{VAC_OV} and V_VAC > V_BAT + V_SLEEP, T_J = –40°C to 125°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
V_{VAC_OV_RISE}
VAC 10.5-V Overvoltage rising
threshold
VAC rising, OVP (REG06[7:6]) = '10'
10.35
10.9
11.5
V_{VAC_OV_RISE}
VAC 14-V Overvoltage rising
threshold
VAC rising, OVP (REG06[7:6]) = '11'
13.5
14.2
14.85
V_{VAC_OV_HYS}
VAC 6.5-V Overvoltage
hysteresis
VAC falling, OVP (REG06[7:6]) =
'01'
320
V_{VAC_OV_HYS}
VAC 10.5-V Overvoltage
hysteresis
VAC falling, OVP (REG06[7:6]) =
'10'
250
V_{VAC_OV_HYS}
V_{BAT_UVLOZ}
V_{BAT_DPL_FALL}
V_{BAT_DPL_RISE}
V_{BAT_DPL_HYST}
VAC 14-V Overvoltage hysteresis
BAT for active I²C, no adapter
Battery Depletion Threshold
Battery Depletion Threshold
Battery Depletion rising
hysteresis
VAC falling, OVP (REG06[7:6]) =
'11'
V_BAT rising
V_BAT falling
V_BAT rising
V_BAT rising
300
2.5
2.2
2.6
2.35
2.8
180
V_{BUSMIN_FALL}
Bad adapter detection falling
threshold
V_BUS falling
3.75
3.9
4.0
V_{BUSMIN_HYST}
Bad adapter detection hysteresis
80
I_BADSRC
Bad adapter detection current
source
Sink current from VBUS to GND
30
POWER-PATH
V_{SYS_MIN}
System regulation voltage
V_VBAT < SYS_MIN[2:0] = 101,
BATFET Disabled (REG07[5] = 1)
3.5
3.68
V_SYS
System Regulation Voltage
I_SYS = 0 A, V_VBAT > V_SYSMIN, V_VBAT
= 4.400 V, BATFET disabled
(REG07[5] = 1)
V_BAT +
50 mV
V_{SYS_MAX}
R_ON(RBFET)
Maximum DC system voltage
output
I_SYS = 0 A, , Q4 off, V_VBAT≤ 4.400 V,
V_VBAT > V_SYSMIN = 3.5V
Top reverse blocking MOSFET
on-resistance between VBUS and -40°C≤ T_A ≤ 125°C
PMID - Q1
4.4
4.45
4.48
45
Top switching MOSFET on-
R_ON(HSFET)
resistance between PMID and
V_REGN = 5 V , -40°C≤ T_A ≤ 125°C
62
SW - Q2
Bottom switching MOSFET on-
R_ON(LSFET)
resistance between SW and GND V_REGN = 5 V , -40°C≤ T_A ≤ 125°C
71
- Q3
V_FWD
BATFET forward voltage in
supplement mode
30
R_ON(BAT-SYS)
R_ON(BAT-SYS)
SYS-BAT MOSFET on-resistance
SYS-BAT MOSFET on-resistance
QFN package, Measured from BAT
to SYS, V_BAT = 4.2V, T_J = 25°C
QFN package, Measured from BAT
to SYS, V_BAT = 4.2V, T_J = –40 -
125°C
19.5
24
19.5
30
BATTERY CHARGER
V_{BATREG_RANGE}
V_{BATREG_STEP}
V_BATREG
V_{BATREG_ACC}
Charge voltage program range
Charge voltage step
Charge voltage setting
Charge voltage setting accuracy
VREG (REG04[7:3]) = 4.208 V
(01011), V, –40 ≤ T_J ≤ 85°C
VREG (REG04[7:3]) = 4.352 V
(01111), V, –40 ≤ T_J ≤ 85°C
V_BAT = 4.208 V or V_BAT = 4.352 V,
–40 ≤ T_J ≤ 85°C
3.856
4.187
4.330
–0.5%
32
4.208
4.352
4.624
4.229
4.374
0.5%
UNIT
V
V
mV
mV
mV
V
V
V
mV
V
mV
mA
V
V
V
mΩ
mΩ
mΩ
mV
mΩ
mΩ
V
mV
V
V
8
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