RM48L930 Datasheet, PDF (74/147 Pages) Texas Instruments – RM48Lx30 16/32-Bit RISC Flash Microcontroller

RM48L930
RM48L730
RM48L530
SPNS176 – SEPTEMBER 2011
www.ti.com
4.10.5 Flash Program and Erase Timings
Table 4-24. Timing Specifications for Flash
Parameter
MIN
NOM
MAX
Unit
t_prog (144bit)
t_prog (Total)
Wide Word (144bit) programming time
3MByte programming time⁽¹⁾
-40°C to 125°C
0°C to 60°C, for first
25 cycles
40
tbd
µs
tbd
s
8
tbd
s
t_prog (Total)
EEPROM Emulation 64kByte programming
time ⁽¹⁾
-40°C to 12°5C
0°C to 60°C, for first
25 cycles
tbd
ms
165
tbd
ms
t_erase (sector) Sector erase time
t_erase (bank)
t_erase (bank)
t_erase (bank)
t_wec
Bank erase time⁽²⁾
Bank erase time⁽²⁾
EEPROM Emulation Bank erase time⁽²⁾
Write/erase cycles
-40°C to 125°C
0°C to 60°C, for first
25 cycles
Flash Bank 0
Flash Bank 1
Flash Bank 7
Flash Bank 0
Flash Bank 1
tbd
ms
30
tbd
ms
300
tbd
ms
240
tbd
ms
80
tbd
ms
1000
cycles
t_wec
Write/erase cycles
Flash Bank 7
100000 cycles
(1) This programming time includes overhead of state machine, but does not include data transfer time.
(2) Nominal conditions for the above specifications mean the first 25 program / erase cycles at an ambient temperature between 0c to 60c
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System Information and Electrical Specifications
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